SILICON TIP TO GLASS SUBSTRATE SECURING METHOD

FIELD: microelectronics, possibly manufacture of displays using low-voltage cathode luminescence. ^ SUBSTANCE: method comprises steps of mechanically working and chemically cleaning surfaces of silicon tip and glass substrate; applying aluminum layer on surfaces of silicon tip and glass substrate; t...

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Bibliographische Detailangaben
Hauptverfasser: NEUDAKHIN ALEKSANDR VALENTINOVICH, ZOTOV NIKOLAJ ALEKSANDROVICH, FROLOV VLADISLAV L'VOVICH
Format: Patent
Sprache:eng ; rus
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Zusammenfassung:FIELD: microelectronics, possibly manufacture of displays using low-voltage cathode luminescence. ^ SUBSTANCE: method comprises steps of mechanically working and chemically cleaning surfaces of silicon tip and glass substrate; applying aluminum layer on surfaces of silicon tip and glass substrate; then applying onto aluminum layer of silicon tip aluminum foil preliminarily subjected to chemical cleaning and welding it by means of ultrasonic welding; placing silicon tip with welded aluminum foil onto glass substrate preliminarily coated with aluminum layer; then welding protruded edges of aluminum foil to aluminum layer of glass substrate with use of ultrasonic welding. ^ EFFECT: possibility for joining silicon tip and glass substrate with high resistance of their joint against outer factors. ^ 2 cl, 4 dwg, 1 ex