TRANSISTOR GENERATOR FOR RESONANCE-TUNED LOADS

FIELD: converter engineering; various processes using ultrasonic waves. ^ SUBSTANCE: proposed transistor generator has half-bridge inverter built around IGBT transistors controlled by half-bridge driver using standard circuit arrangement and provided with internal generator, external time-setting RC...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NEGROV D.A, SHUSTER JA.B, REZNIK L.B, NOVIKOV A.A
Format: Patent
Sprache:eng ; rus
Schlagworte:
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Beschreibung
Zusammenfassung:FIELD: converter engineering; various processes using ultrasonic waves. ^ SUBSTANCE: proposed transistor generator has half-bridge inverter built around IGBT transistors controlled by half-bridge driver using standard circuit arrangement and provided with internal generator, external time-setting RC circuit, and output transformer; it also has optocoupler transistor, three additional resistors, capacitor, and current transformer. ^ EFFECT: enhanced effectiveness of transistor generator operating into resonance-tuned load. ^ 1 cl, 2 dwg