TRANSISTOR GENERATOR FOR RESONANCE-TUNED LOADS
FIELD: converter engineering; various processes using ultrasonic waves. ^ SUBSTANCE: proposed transistor generator has half-bridge inverter built around IGBT transistors controlled by half-bridge driver using standard circuit arrangement and provided with internal generator, external time-setting RC...
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Format: | Patent |
Sprache: | eng ; rus |
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Zusammenfassung: | FIELD: converter engineering; various processes using ultrasonic waves. ^ SUBSTANCE: proposed transistor generator has half-bridge inverter built around IGBT transistors controlled by half-bridge driver using standard circuit arrangement and provided with internal generator, external time-setting RC circuit, and output transformer; it also has optocoupler transistor, three additional resistors, capacitor, and current transformer. ^ EFFECT: enhanced effectiveness of transistor generator operating into resonance-tuned load. ^ 1 cl, 2 dwg |
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