EMITTER FOR INTEGRATED DEVICE

FIELD: microelectronics and nanoelectronics; emitters for active parts of microelectronics and nanoelectronics, that is diodes and transistors. ^ SUBSTANCE: proposed emitter has emitter base disposed on substrate and made of catalytic material layer whose surface mounts nanometric carbon tubes arran...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: POLTORATSKIJ EH.A, GAVRILOV S.A, RYCHKOV G.S, IL'ICHEV EH.A
Format: Patent
Sprache:eng ; rus
Schlagworte:
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