EMITTER FOR INTEGRATED DEVICE

FIELD: microelectronics and nanoelectronics; emitters for active parts of microelectronics and nanoelectronics, that is diodes and transistors. ^ SUBSTANCE: proposed emitter has emitter base disposed on substrate and made of catalytic material layer whose surface mounts nanometric carbon tubes arranged perpendicular to emitter base surface, catalytic material layer end being used as emitter base and disposed between non-catalytic material layers. Such design makes it possible to develop planar blade-shaped emitter whose base thickness can be adjusted between 1 and 50 nm by varying thickness of catalytic layer; This emitter is assembled of nanometric tubes whose diameter is not greater than thickness of base. ^ EFFECT: provision for developing planar emitter. ^ 1 cl, 4 dwg