METHOD FOR CLEANING PARTS, PRIMARILY SEMICONDUCTOR WAFERS

METHOD FOR CLEANING PARTS, PRIMARILY SEMICONDUCTOR WAFERS

FIELD: semiconductor microelectronics; high-degree surface cleaning technologies. ^ SUBSTANCE: proposed method can be used in resource and energy conservation environmentally friendly and safe technology for integrated circuit manufacture, removal of positive photoresist from wafer surface, electroc...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PUTILOV A.V, GRIBOV B.G, POTAPOVA G.F, KLOCHIKHIN V.L
Format: Patent
Sprache:eng ; rus
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:FIELD: semiconductor microelectronics; high-degree surface cleaning technologies. ^ SUBSTANCE: proposed method can be used in resource and energy conservation environmentally friendly and safe technology for integrated circuit manufacture, removal of positive photoresist from wafer surface, electrochemical etching of silicon, and degreasing of surfaces. Si surface is cleaned by detergent NH4HF2 of 0.1 - 4 M concentration activated by ozone at anode current density of 1 - 2 kA/m2, and waste solution is cleaned and activated by sequentially passing it through electrolyzer cathode and anode chamber. ^ EFFECT: enhanced quality and effectiveness of photoresist removal from semiconductor surface. ^ 2 cl, 2 dwg