METHOD OF CONTROL OF LEVEL OF MELT IN CRUCIBLE IN THE COURSE OF CRYSTAL GROWTH

FIELD: production of semiconductor materials. SUBSTANCE: control of melt level in crucible is performed by means of video camera which is placed at angle relative to vertical. Angle between vertical and beam passing through focus of optical system of video camera and center of circumference formed b...

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Bibliographische Detailangaben
Hauptverfasser:	BOGOMOLOV S.N, LEVIN M.I, SHUSHKOV V.M, MAKALINSKIJ M.A, SIDEL'NIKOV S.A, BUKOLOV JU.V, KUDINOV B.I
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: production of semiconductor materials. SUBSTANCE: control of melt level in crucible is performed by means of video camera which is placed at angle relative to vertical. Angle between vertical and beam passing through focus of optical system of video camera and center of circumference formed by crystal being grown at boundary with melt is determined by continuous video image. Distance between video camera and plane of melt is calculated according to said angle and crucible with melt is raised to required level. EFFECT: simplification of process; enhanced accuracy of control of melt level. 5 dwg, 1 ex