METHOD OF REFINING GALLIUM

FIELD: cleaning gallium by oriented crystallization method. SUBSTANCE: proposed method includes preparation of melt, local cooling of this melt, growth of crystal at its upward motion over circumference at linear velocity of 5 to 30 mm/h. Melt is mixed at rate of 5 to 30 mm/h, degree of purification...

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Bibliographische Detailangaben
Hauptverfasser: SIDOROV O.L, PETRUKHIN I.O, SAZHIN M.V, KOZLOV S.A, POTOLOKOV N.A
Format: Patent
Sprache:eng ; rus
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Zusammenfassung:FIELD: cleaning gallium by oriented crystallization method. SUBSTANCE: proposed method includes preparation of melt, local cooling of this melt, growth of crystal at its upward motion over circumference at linear velocity of 5 to 30 mm/h. Melt is mixed at rate of 5 to 30 mm/h, degree of purification of 99,99991 to 99.9999 mass-% and degree of hardening of 70 to 95%. EFFECT: increased productivity. 1 tbl, 1 ex