CRYSTAL GROWING APPARATUS

FIELD: growing of optical monocrystals by Choschralsky method. SUBSTANCE: apparatus having crucible, seed holder, upper and lower ceramic screens also includes diaphragm arranged over melt. Cylindrical insert made of material permeable for heat irradiation, for example of melt quartz or leucosapphir...

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Bibliographische Detailangaben
Hauptverfasser:	GUKASOV A.A, SMIRNOV V.B, GABRIELJAN V.T, SMIRNOV P.V
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: growing of optical monocrystals by Choschralsky method. SUBSTANCE: apparatus having crucible, seed holder, upper and lower ceramic screens also includes diaphragm arranged over melt. Cylindrical insert made of material permeable for heat irradiation, for example of melt quartz or leucosapphire is placed between ceramic screens. Level of lower edge of said insert coincides with upper surface of diaphragm. Height of insert s=sd/L, where DELTAh is distance from lower edge of diaphragm until initial level of melt; DELTAH is melt level drop during process; d is distance between diaphragm and crystal; L is length of upper coat of insert. Diameter of upper screen is less than that of lower screen; distance from crystal until upper screen is selected equal to d. EFFECT: possibility for making optical crystals of large size and high uniformity, less number of rejected crystals at growing them. 2 cl, 9 dwg