METHOD AND DEVICE FOR CRYSTAL GROWING

FIELD: growing of artificial crystals (ZnO, SiO2, CaCO3, Al2O3). SUBSTANCE: method and device are applicable in hydrothermal growing of crystals in vessel pressure containing crystal feed immersed in mineralizing solution. Device is located in vessel under pressure higher than that of mineralizing s...

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Bibliographische Detailangaben
1. Verfasser:	KLIPOV VLADIMIR ALEKSEEVICH
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: growing of artificial crystals (ZnO, SiO2, CaCO3, Al2O3). SUBSTANCE: method and device are applicable in hydrothermal growing of crystals in vessel pressure containing crystal feed immersed in mineralizing solution. Device is located in vessel under pressure higher than that of mineralizing solution. Device includes restricting case having opposite main walls with channels passing through them. Restricting case fully encloses seeding wafer having opposite main surfaces. Holding member holds seeding wafer in restricting case so that main surfaces of seeding wafer are located with some interval inside from main walls. EFFECT: production of crystals with shape and size suitable for their efficient industrial use. 38 cl, 8 dwg