PROCEDURE FORMING IMPURITY CONTOUR IN SEMICONDUCTOR AND DIELECTRIC MATERIALS

FIELD: formation of very-low and very-deep p-n junctions in semiconductor materials. SUBSTANCE: procedure can also find use for clearing contaminating impurities, for total or local change of their optical properties and color. In contrast to known methods of formation of impurity contours by way of...

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Bibliographische Detailangaben
Hauptverfasser:	TAKESHI SAITO, MURASHEV V.N
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: formation of very-low and very-deep p-n junctions in semiconductor materials. SUBSTANCE: procedure can also find use for clearing contaminating impurities, for total or local change of their optical properties and color. In contrast to known methods of formation of impurity contours by way of diffusion or electric diffusion from limited source there is proposed radiation electrothermodiffusion method consisting in execution of thermoelectric diffusion in electric field with intensity over 10.0 W/cm at temperature of 300-2000 C and in simultaneous irradiation of samples by electron fluxes with energy 0.25-10.0 MeV and flux 115-1019e/cm2. EFFECT: creation of electrically controlled and effective diffusion with relatively soft electron irradiation which facilitates formation of easily annealed point defects of type of vacancy and atom in interstitial site. 1 cl, 1 dwg