METHOD FOR REACTIVE ION-PLASMA ETCHING OF TANTALUM, TANTALUM-NITROGEN, AND TANTALUM-ALUMINUM FILMS
FIELD: resistor and protective metal coating formation steps in integrated circuit manufacture. SUBSTANCE: method includes reactive ion-plasma etching process for Ta, TaN, and TaAl films in BCl3-Cl2-CCl4-N2 plasma including additional etching of residues of these films on embossed surface in CF4-O2...
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| creator | JACHMENEV V.V ALEKSEEV N.V EREMENKO A.N KLYCHNIKOV N.I EREMCHUK A.I |
| description | FIELD: resistor and protective metal coating formation steps in integrated circuit manufacture. SUBSTANCE: method includes reactive ion-plasma etching process for Ta, TaN, and TaAl films in BCl3-Cl2-CCl4-N2 plasma including additional etching of residues of these films on embossed surface in CF4-O2 or SF6-O2 plasma. EFFECT: reduced scatter of resistor ratings and dimensions of circuit components. 2 cl |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR REACTIVE ION-PLASMA ETCHING OF TANTALUM, TANTALUM-NITROGEN, AND TANTALUM-ALUMINUM FILMS |
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