METHOD FOR REACTIVE ION-PLASMA ETCHING OF TANTALUM, TANTALUM-NITROGEN, AND TANTALUM-ALUMINUM FILMS

METHOD FOR REACTIVE ION-PLASMA ETCHING OF TANTALUM, TANTALUM-NITROGEN, AND TANTALUM-ALUMINUM FILMS

FIELD: resistor and protective metal coating formation steps in integrated circuit manufacture. SUBSTANCE: method includes reactive ion-plasma etching process for Ta, TaN, and TaAl films in BCl3-Cl2-CCl4-N2 plasma including additional etching of residues of these films on embossed surface in CF4-O2...

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Bibliographische Detailangaben
Hauptverfasser: JACHMENEV V.V, ALEKSEEV N.V, EREMENKO A.N, KLYCHNIKOV N.I, EREMCHUK A.I
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:FIELD: resistor and protective metal coating formation steps in integrated circuit manufacture. SUBSTANCE: method includes reactive ion-plasma etching process for Ta, TaN, and TaAl films in BCl3-Cl2-CCl4-N2 plasma including additional etching of residues of these films on embossed surface in CF4-O2 or SF6-O2 plasma. EFFECT: reduced scatter of resistor ratings and dimensions of circuit components. 2 cl