THERMOPILE SWITCHING METHOD

FIELD: thermoelectric devices such as thermoelectric coolers and generators. SUBSTANCE: method involves deposition of nickel or cobalt layer on thermopile circuits at rate of alternating with treatment of deposited layer with inert gas ions at energy of 0.4 to 0.8 KeV and dose rate of 1015÷1017 ion/sq. cm with intervals of 2-10 s, vacuum annealing of deposited contacts for 30-60 min., application of solder and soldering of thermopile circuits to switching buses. Prior to depositing nickel or cobalt layer by ion-plasma technique, molybdenum or tungsten layer is deposited at rate of with deposited layer being alternately treated by inert gas ions at energy of O.4-0.8 KeV and dose rate of 1015÷1017 ion/sq. cm with intervals of 2-10 sec. Vacuum annealing of deposited metal layers is conducted at temperature of 150-220 C for n- type circuits and 150-220 C for p-type circuits. EFFECT: facilitated procedure. 1 tbl