SEMICONDUCTOR PRESSURE TRANSDUCER

FIELD: automatic-control systems. SUBSTANCE: power sensitive resistors are introduced into the device in the form of structure of contrary rod-type electrodes applied on semiconductor substrate. Electrode-gate in the device is made of synthetic conducting material, for example, elastomer. Operation...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ZARIPOV M.F, PETROVA I.JU, REZNIK D.A
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:FIELD: automatic-control systems. SUBSTANCE: power sensitive resistors are introduced into the device in the form of structure of contrary rod-type electrodes applied on semiconductor substrate. Electrode-gate in the device is made of synthetic conducting material, for example, elastomer. Operation of applying the dielectric layer is simplified considerably, since it is applied in continuous layer and not fragmentarily. EFFECT: increased accuracy, enlarged measurement range. 2 cl, 3 dwg