EVAPORATION CRUCIBLE

FIELD: semiconductor technology. SUBSTANCE: invention can be used in molecular-ray epitaxy to diminish density of defects in epitaxial structures. Evaporation crucible includes space for evaporated substance and separating member anchored in its neck. Separating member is manufactured in the form of...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MIKHAJLOV N.N, ANTSIFEROV A.P, SIDOROV JU.G, JAKUSHEV M.V
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	FIELD: semiconductor technology. SUBSTANCE: invention can be used in molecular-ray epitaxy to diminish density of defects in epitaxial structures. Evaporation crucible includes space for evaporated substance and separating member anchored in its neck. Separating member is manufactured in the form of insert with helical conduit. Usage of invention provides opportunity to decrease probability of getting residual vapors of vacuum space into crucible of molecular source without considerable reduction of conductance of crucible and to diminish density of defects in epitaxial structures. Use of invention makes it feasible to decrease density of defects in cadmium telluride film from magnitude to magnitude less than . EFFECT: decreased density of defects in cadmium telluride film. 2 dwg