SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING PROCESS

FIELD: computer engineering. SUBSTANCE: device incorporates many locations formed by alternate application of cells with magazine-type capacitor and those with combined magazine-and-slot capacitor along row and column. Each storage electrode of storage cell capacitor is enhanced for overlapping storage electrode of adjacent cell capacitor. Combined magazine-and-slot capacitor is shaped in substrate to increase its storage capacity enabling increase in storage capacity of magazine- type capacitor by enhancing capacitor storage electrode. EFFECT: provision for preventing stepped overlapping, current leakage, and random errors of magazine-and-slot capacitor ensured due to alternating arrangement of cells. 17 cl, 13 dwg