METHOD OF GROWING SEMICONDUCTOR COMPOUND CRYSTALS

FIELD: microelectronics. SUBSTANCE: when manufacturing discrete semiconductor devices and integrated circuits, starting material is melted, shape of crystallization front is recorded, and thermodynamic parameters of monocrystal growth according to specified dependence are restored. EFFECT: optimized...

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Bibliographische Detailangaben
Hauptverfasser:	DRAKOV A.A, OZERNYKH I.L, SAJAPIN S.N, BITUSHAN E.I, SVIRIDENKO I.P
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	FIELD: microelectronics. SUBSTANCE: when manufacturing discrete semiconductor devices and integrated circuits, starting material is melted, shape of crystallization front is recorded, and thermodynamic parameters of monocrystal growth according to specified dependence are restored. EFFECT: optimized growth of monocrystal. 1 dwg.