METHOD FOR PROCESSING OF SILICON PLATES

FIELD: microelectronics, in particular, manufacturing of digital equipment and integral circuits. SUBSTANCE: method involves preliminary restorable deformation of plates by means of bending so that working side of plate is concave, running triple-stage annealing of plates in deformed state in noble...

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Bibliographische Detailangaben
Hauptverfasser:	KABAL'NOV JU.A, SMOLIN V.K, SINEGUBKO L.A, SKUPOV V.D, PETUROV N.I, SOLOV'EV A.I
Format:	Patent
Sprache:	eng ; rus
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	FIELD: microelectronics, in particular, manufacturing of digital equipment and integral circuits. SUBSTANCE: method involves preliminary restorable deformation of plates by means of bending so that working side of plate is concave, running triple-stage annealing of plates in deformed state in noble gas. First stage annealing runs at temperature of 1270-14-70 K, then temperature is decreased under rate of 1.4-16 K per minute and plates are kept at temperature of 1070-1120 K. Then temperature is again increased under rate of 1.4-16 K per minute and plates are kept at temperature of 1270-1470 K. EFFECT: increased functional capabilities. 1 tbl