CHEMICAL PROCESS FOR GRAPHENE TRANSFER FROM ONE SUBSTRATE TO ANOTHER

The invention relates to a process for the transfer of graphene grown on a copper substrate, by chemical vapour deposition (CVD), onto another substrate. According to the invention, the process consists in depositing a film of polymethyl methacrylate (PMMA) onto the graphene/copper substrate, follow...

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Bibliographische Detailangaben
Hauptverfasser: AVRAM MARIOARA, MĂRCULESCU CĂTĂLIN VALENTIN, ŢUCUREANU VASILICA, BURINARU TIBERIU ALECU, MATEI ALINA, ŢÎNCU BIANCA CĂTĂLINA, AVRAM MARIUS ANDREI
Format: Patent
Sprache:eng ; rum
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Zusammenfassung:The invention relates to a process for the transfer of graphene grown on a copper substrate, by chemical vapour deposition (CVD), onto another substrate. According to the invention, the process consists in depositing a film of polymethyl methacrylate (PMMA) onto the graphene/copper substrate, followed by a heat treatment at 120°C, for 2 min, etching the copper substrate in a HCl:HO:HOsolution, in the presence of hexane, at the ambient temperature, and washing with deionized water, after which the transfer of the graphene/PMMA layer onto the substrate of interest takes place, followed by a heat treatment at 120°C, for 2 h, and by the removal of the PMMA and by the final treatment at 180°C, for 2 h.