PROCESS FOR PREPARING TRANSPARENT FLEXIBLE ELECTRODES

PROCESS FOR PREPARING TRANSPARENT FLEXIBLE ELECTRODES

The invention relates to a process for preparing flexible transparent electrodes by laser ablation at low temperature, for using them in electronics and optoelectronics applications, such as solar cells, semiconductor light-emitting devices LED or organic light-emitting devices OLED, transparent tra...

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Bibliographische Detailangaben
Hauptverfasser: URSU CRISTIAN, CHIRICUŢĂ BOGDAN, ŢÎMPU ILIE DANIEL, COMAN BOGDAN TUDOR, OLARU ADRIANA MIHAELA, MARIN LUMINIŢA
Format: Patent
Sprache:eng ; rum
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:The invention relates to a process for preparing flexible transparent electrodes by laser ablation at low temperature, for using them in electronics and optoelectronics applications, such as solar cells, semiconductor light-emitting devices LED or organic light-emitting devices OLED, transparent transistors and displays. The process, as claimed by the invention, consists in depositing a thin layer of aluminium-doped Zn oxide AZO on polyethylene terephthalate PET, the AZO layer being obtained by the alternating laser ablation of two metallic targets, Zn and Al, in oxygen-argon atmosphere, while heating the substrate up to a temperature of 100°C, to obtain thereby flexible transparent electrodes with a transmittance of 90.8% in the visible range and an electric resistivity of 4.3 x 10Ohm cm.