INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION

The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for o...

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Hauptverfasser: BECHERESCU BARBU DAN NICOLAE, UDREA MIRCEA, VELICU IOANA-LAURA, OSIAC MARIANA, MIHĂILĂ ILARION, TIRON VASILE, POPA GHEORGHE
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creator BECHERESCU BARBU DAN NICOLAE
UDREA MIRCEA
VELICU IOANA-LAURA
OSIAC MARIANA
MIHĂILĂ ILARION
TIRON VASILE
POPA GHEORGHE
description The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for optical and spectral diagnosis and with electric passages for electric plasma diagnostic, which is connected, by means of an insulating trap (4), to a low pressure production system consisting of a turbomolecular pump (2) and a dry mechanical pump (3), a magnetron type cathode (5) with a disk-shaped target (6) of various metals or metallic compounds, indirectly cooled and with a standard structure of balanced magnetic field, a high power pulse generator (9), with pre-ionisation, of variable voltage and frequency, which produces an electrical discharge between the target (6) and the deposition chamber (1) and generates an argon plasma magnetically-confined due to the presence of a toroidal permanent magnet (7), mounted coaxially with the target (6), at a variable distance therefrom, when the pressure of the working gas, introduced into the deposition chamber by means of a gas controller (8), is about 1 Pa. The claimed process consists in using a magnetron discharge in high power pulses, with a voltage amplitude of about 1 kV, pulse duration ranging between 3...50 μs and pulse repetition frequency ranging between 100 Hz...11 Khz, produced in the presence of argon, at a pressure of about 1 Pa and in the presence of an auxiliary static magnetic field of induction ranging between 1kG...4.5 kG. Invenţia se referă la o instalaţie şi la un procedeu pentru optimizarea procesului de depunere de straturi subţiri, folosind pulverizarea cu un magnetron în regim pulsat şi un câmp magnetic auxiliar. Instalaţia conform invenţiei cuprinde: o cameră de depunere (1) din oţel inoxidabil, de formă cilindrică, prevăzută cu ferestre pentru diagnoza optică şi spectrală, şi cu treceri electrice pentru diagnoza electrică a plasmei, racordată, prin intermediul unei trape (4) de izolaţie, la un sistem pentru producerea presiunilor joase, alcătuit dintr-o pompă (2) turbomoleculară şi dintr-o pompă (3) mecanică uscată, un catod (5) de tip magnetron, cu o ţintă (6) de forma unui disc confecţionat din diferite metale sau compuşi metalici, răcit indirect, şi cu o structură standard de câmp magnetic balansat, un generator (9) de pulsuri de mare putere, cu preionizare, cu tensiune şi frecvenţă var
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_RO132311A2</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>RO132311A2</sourcerecordid><originalsourceid>FETCH-epo_espacenet_RO132311A23</originalsourceid><addsrcrecordid>eNqFjU0KwjAQhbtxIeoZnAu4aHuC0EySgZiUmYh0VYrElWih4vmN4t7V93i8n3X1oiBJea8SxQAqaOg5digCJjIkhyBDKBASiKYYFMCrAVmgqP7kBTUclQ2YuAxoks4ptghnSg4cWQcaLSN-2uWC5Pu0rVbX6bbk3Y-bam8wde6Q58eYl3m65Ht-jhzrtmnrWjXt_8QbSXA4lA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION</title><source>esp@cenet</source><creator>BECHERESCU BARBU DAN NICOLAE ; UDREA MIRCEA ; VELICU IOANA-LAURA ; OSIAC MARIANA ; MIHĂILĂ ILARION ; TIRON VASILE ; POPA GHEORGHE</creator><creatorcontrib>BECHERESCU BARBU DAN NICOLAE ; UDREA MIRCEA ; VELICU IOANA-LAURA ; OSIAC MARIANA ; MIHĂILĂ ILARION ; TIRON VASILE ; POPA GHEORGHE</creatorcontrib><description>The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for optical and spectral diagnosis and with electric passages for electric plasma diagnostic, which is connected, by means of an insulating trap (4), to a low pressure production system consisting of a turbomolecular pump (2) and a dry mechanical pump (3), a magnetron type cathode (5) with a disk-shaped target (6) of various metals or metallic compounds, indirectly cooled and with a standard structure of balanced magnetic field, a high power pulse generator (9), with pre-ionisation, of variable voltage and frequency, which produces an electrical discharge between the target (6) and the deposition chamber (1) and generates an argon plasma magnetically-confined due to the presence of a toroidal permanent magnet (7), mounted coaxially with the target (6), at a variable distance therefrom, when the pressure of the working gas, introduced into the deposition chamber by means of a gas controller (8), is about 1 Pa. The claimed process consists in using a magnetron discharge in high power pulses, with a voltage amplitude of about 1 kV, pulse duration ranging between 3...50 μs and pulse repetition frequency ranging between 100 Hz...11 Khz, produced in the presence of argon, at a pressure of about 1 Pa and in the presence of an auxiliary static magnetic field of induction ranging between 1kG...4.5 kG. Invenţia se referă la o instalaţie şi la un procedeu pentru optimizarea procesului de depunere de straturi subţiri, folosind pulverizarea cu un magnetron în regim pulsat şi un câmp magnetic auxiliar. Instalaţia conform invenţiei cuprinde: o cameră de depunere (1) din oţel inoxidabil, de formă cilindrică, prevăzută cu ferestre pentru diagnoza optică şi spectrală, şi cu treceri electrice pentru diagnoza electrică a plasmei, racordată, prin intermediul unei trape (4) de izolaţie, la un sistem pentru producerea presiunilor joase, alcătuit dintr-o pompă (2) turbomoleculară şi dintr-o pompă (3) mecanică uscată, un catod (5) de tip magnetron, cu o ţintă (6) de forma unui disc confecţionat din diferite metale sau compuşi metalici, răcit indirect, şi cu o structură standard de câmp magnetic balansat, un generator (9) de pulsuri de mare putere, cu preionizare, cu tensiune şi frecvenţă variabile, care produce o descărcare electrică între ţintă (6) şi camera de depunere (1), şi apariţia unei plasme de argon confinată magnetic, datorită prezenţei unui magnet (7) permanent, de formă toroidală, montat coaxial cu ţinta (6), la o distanţă variabilă de aceasta, atunci când presiunea gazului de lucru introdus în camera de depunere printr-un controler de gaz (8) este în jur de 1 Pa. Procedeul conform invenţiei constă în folosirea unei descărcări magnetron în impulsuri de mare putere, cu amplitudinea tensiunii de circa 1 kV, durata pulsului cuprinsă între 3 şi 50 μs şi frecvenţa de repetiţie a pulsurilor cuprinsă între 100 Hz şi 11 KHz, produsă în prezenţa argonului, la o presiune de circa 1 Pa şi în prezenţa unui câmp magnetic static auxiliar, de inducţie cuprinsă între 1 kG şi 4,5 kG.</description><language>eng ; rum</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171229&amp;DB=EPODOC&amp;CC=RO&amp;NR=132311A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20171229&amp;DB=EPODOC&amp;CC=RO&amp;NR=132311A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BECHERESCU BARBU DAN NICOLAE</creatorcontrib><creatorcontrib>UDREA MIRCEA</creatorcontrib><creatorcontrib>VELICU IOANA-LAURA</creatorcontrib><creatorcontrib>OSIAC MARIANA</creatorcontrib><creatorcontrib>MIHĂILĂ ILARION</creatorcontrib><creatorcontrib>TIRON VASILE</creatorcontrib><creatorcontrib>POPA GHEORGHE</creatorcontrib><title>INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION</title><description>The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for optical and spectral diagnosis and with electric passages for electric plasma diagnostic, which is connected, by means of an insulating trap (4), to a low pressure production system consisting of a turbomolecular pump (2) and a dry mechanical pump (3), a magnetron type cathode (5) with a disk-shaped target (6) of various metals or metallic compounds, indirectly cooled and with a standard structure of balanced magnetic field, a high power pulse generator (9), with pre-ionisation, of variable voltage and frequency, which produces an electrical discharge between the target (6) and the deposition chamber (1) and generates an argon plasma magnetically-confined due to the presence of a toroidal permanent magnet (7), mounted coaxially with the target (6), at a variable distance therefrom, when the pressure of the working gas, introduced into the deposition chamber by means of a gas controller (8), is about 1 Pa. The claimed process consists in using a magnetron discharge in high power pulses, with a voltage amplitude of about 1 kV, pulse duration ranging between 3...50 μs and pulse repetition frequency ranging between 100 Hz...11 Khz, produced in the presence of argon, at a pressure of about 1 Pa and in the presence of an auxiliary static magnetic field of induction ranging between 1kG...4.5 kG. Invenţia se referă la o instalaţie şi la un procedeu pentru optimizarea procesului de depunere de straturi subţiri, folosind pulverizarea cu un magnetron în regim pulsat şi un câmp magnetic auxiliar. Instalaţia conform invenţiei cuprinde: o cameră de depunere (1) din oţel inoxidabil, de formă cilindrică, prevăzută cu ferestre pentru diagnoza optică şi spectrală, şi cu treceri electrice pentru diagnoza electrică a plasmei, racordată, prin intermediul unei trape (4) de izolaţie, la un sistem pentru producerea presiunilor joase, alcătuit dintr-o pompă (2) turbomoleculară şi dintr-o pompă (3) mecanică uscată, un catod (5) de tip magnetron, cu o ţintă (6) de forma unui disc confecţionat din diferite metale sau compuşi metalici, răcit indirect, şi cu o structură standard de câmp magnetic balansat, un generator (9) de pulsuri de mare putere, cu preionizare, cu tensiune şi frecvenţă variabile, care produce o descărcare electrică între ţintă (6) şi camera de depunere (1), şi apariţia unei plasme de argon confinată magnetic, datorită prezenţei unui magnet (7) permanent, de formă toroidală, montat coaxial cu ţinta (6), la o distanţă variabilă de aceasta, atunci când presiunea gazului de lucru introdus în camera de depunere printr-un controler de gaz (8) este în jur de 1 Pa. Procedeul conform invenţiei constă în folosirea unei descărcări magnetron în impulsuri de mare putere, cu amplitudinea tensiunii de circa 1 kV, durata pulsului cuprinsă între 3 şi 50 μs şi frecvenţa de repetiţie a pulsurilor cuprinsă între 100 Hz şi 11 KHz, produsă în prezenţa argonului, la o presiune de circa 1 Pa şi în prezenţa unui câmp magnetic static auxiliar, de inducţie cuprinsă între 1 kG şi 4,5 kG.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqFjU0KwjAQhbtxIeoZnAu4aHuC0EySgZiUmYh0VYrElWih4vmN4t7V93i8n3X1oiBJea8SxQAqaOg5digCJjIkhyBDKBASiKYYFMCrAVmgqP7kBTUclQ2YuAxoks4ptghnSg4cWQcaLSN-2uWC5Pu0rVbX6bbk3Y-bam8wde6Q58eYl3m65Ht-jhzrtmnrWjXt_8QbSXA4lA</recordid><startdate>20171229</startdate><enddate>20171229</enddate><creator>BECHERESCU BARBU DAN NICOLAE</creator><creator>UDREA MIRCEA</creator><creator>VELICU IOANA-LAURA</creator><creator>OSIAC MARIANA</creator><creator>MIHĂILĂ ILARION</creator><creator>TIRON VASILE</creator><creator>POPA GHEORGHE</creator><scope>EVB</scope></search><sort><creationdate>20171229</creationdate><title>INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION</title><author>BECHERESCU BARBU DAN NICOLAE ; UDREA MIRCEA ; VELICU IOANA-LAURA ; OSIAC MARIANA ; MIHĂILĂ ILARION ; TIRON VASILE ; POPA GHEORGHE</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_RO132311A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; rum</language><creationdate>2017</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>BECHERESCU BARBU DAN NICOLAE</creatorcontrib><creatorcontrib>UDREA MIRCEA</creatorcontrib><creatorcontrib>VELICU IOANA-LAURA</creatorcontrib><creatorcontrib>OSIAC MARIANA</creatorcontrib><creatorcontrib>MIHĂILĂ ILARION</creatorcontrib><creatorcontrib>TIRON VASILE</creatorcontrib><creatorcontrib>POPA GHEORGHE</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BECHERESCU BARBU DAN NICOLAE</au><au>UDREA MIRCEA</au><au>VELICU IOANA-LAURA</au><au>OSIAC MARIANA</au><au>MIHĂILĂ ILARION</au><au>TIRON VASILE</au><au>POPA GHEORGHE</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION</title><date>2017-12-29</date><risdate>2017</risdate><abstract>The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for optical and spectral diagnosis and with electric passages for electric plasma diagnostic, which is connected, by means of an insulating trap (4), to a low pressure production system consisting of a turbomolecular pump (2) and a dry mechanical pump (3), a magnetron type cathode (5) with a disk-shaped target (6) of various metals or metallic compounds, indirectly cooled and with a standard structure of balanced magnetic field, a high power pulse generator (9), with pre-ionisation, of variable voltage and frequency, which produces an electrical discharge between the target (6) and the deposition chamber (1) and generates an argon plasma magnetically-confined due to the presence of a toroidal permanent magnet (7), mounted coaxially with the target (6), at a variable distance therefrom, when the pressure of the working gas, introduced into the deposition chamber by means of a gas controller (8), is about 1 Pa. The claimed process consists in using a magnetron discharge in high power pulses, with a voltage amplitude of about 1 kV, pulse duration ranging between 3...50 μs and pulse repetition frequency ranging between 100 Hz...11 Khz, produced in the presence of argon, at a pressure of about 1 Pa and in the presence of an auxiliary static magnetic field of induction ranging between 1kG...4.5 kG. Invenţia se referă la o instalaţie şi la un procedeu pentru optimizarea procesului de depunere de straturi subţiri, folosind pulverizarea cu un magnetron în regim pulsat şi un câmp magnetic auxiliar. Instalaţia conform invenţiei cuprinde: o cameră de depunere (1) din oţel inoxidabil, de formă cilindrică, prevăzută cu ferestre pentru diagnoza optică şi spectrală, şi cu treceri electrice pentru diagnoza electrică a plasmei, racordată, prin intermediul unei trape (4) de izolaţie, la un sistem pentru producerea presiunilor joase, alcătuit dintr-o pompă (2) turbomoleculară şi dintr-o pompă (3) mecanică uscată, un catod (5) de tip magnetron, cu o ţintă (6) de forma unui disc confecţionat din diferite metale sau compuşi metalici, răcit indirect, şi cu o structură standard de câmp magnetic balansat, un generator (9) de pulsuri de mare putere, cu preionizare, cu tensiune şi frecvenţă variabile, care produce o descărcare electrică între ţintă (6) şi camera de depunere (1), şi apariţia unei plasme de argon confinată magnetic, datorită prezenţei unui magnet (7) permanent, de formă toroidală, montat coaxial cu ţinta (6), la o distanţă variabilă de aceasta, atunci când presiunea gazului de lucru introdus în camera de depunere printr-un controler de gaz (8) este în jur de 1 Pa. Procedeul conform invenţiei constă în folosirea unei descărcări magnetron în impulsuri de mare putere, cu amplitudinea tensiunii de circa 1 kV, durata pulsului cuprinsă între 3 şi 50 μs şi frecvenţa de repetiţie a pulsurilor cuprinsă între 100 Hz şi 11 KHz, produsă în prezenţa argonului, la o presiune de circa 1 Pa şi în prezenţa unui câmp magnetic static auxiliar, de inducţie cuprinsă între 1 kG şi 4,5 kG.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION
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