INSTALLATION AND PROCESS FOR THE SYNTHESIS OF THIN LAYERS IN PULSED MAGNETRON DISCHARGE WITH HIGH DEGREE OF IONISATION
The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for o...
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Zusammenfassung: | The invention relates to an installation and a process for optimizing the thin layer deposition process by pulsed magnetron sputtering and auxiliary magnetic field. The claimed installation comprises: a deposition chamber (1) made of stainless steel, of cylindrical shape, provided with windows for optical and spectral diagnosis and with electric passages for electric plasma diagnostic, which is connected, by means of an insulating trap (4), to a low pressure production system consisting of a turbomolecular pump (2) and a dry mechanical pump (3), a magnetron type cathode (5) with a disk-shaped target (6) of various metals or metallic compounds, indirectly cooled and with a standard structure of balanced magnetic field, a high power pulse generator (9), with pre-ionisation, of variable voltage and frequency, which produces an electrical discharge between the target (6) and the deposition chamber (1) and generates an argon plasma magnetically-confined due to the presence of a toroidal permanent magnet (7), mounted coaxially with the target (6), at a variable distance therefrom, when the pressure of the working gas, introduced into the deposition chamber by means of a gas controller (8), is about 1 Pa. The claimed process consists in using a magnetron discharge in high power pulses, with a voltage amplitude of about 1 kV, pulse duration ranging between 3...50 μs and pulse repetition frequency ranging between 100 Hz...11 Khz, produced in the presence of argon, at a pressure of about 1 Pa and in the presence of an auxiliary static magnetic field of induction ranging between 1kG...4.5 kG.
Invenţia se referă la o instalaţie şi la un procedeu pentru optimizarea procesului de depunere de straturi subţiri, folosind pulverizarea cu un magnetron în regim pulsat şi un câmp magnetic auxiliar. Instalaţia conform invenţiei cuprinde: o cameră de depunere (1) din oţel inoxidabil, de formă cilindrică, prevăzută cu ferestre pentru diagnoza optică şi spectrală, şi cu treceri electrice pentru diagnoza electrică a plasmei, racordată, prin intermediul unei trape (4) de izolaţie, la un sistem pentru producerea presiunilor joase, alcătuit dintr-o pompă (2) turbomoleculară şi dintr-o pompă (3) mecanică uscată, un catod (5) de tip magnetron, cu o ţintă (6) de forma unui disc confecţionat din diferite metale sau compuşi metalici, răcit indirect, şi cu o structură standard de câmp magnetic balansat, un generator (9) de pulsuri de mare putere, cu preionizare, cu tensiune şi frecvenţă var |
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