TW/PW-CLASS POWER LASER IRRADIATION
The invention relates to a method for producing nanometric layers with content of diamond or fullerene nanoparticles, by irradiation with ultrashort pulses within the range of picoseconds and femtoseconds, generated by high power lasers (terawatt - TW or petawatt - PW) and, in particular, to a proce...
Gespeichert in:
Hauptverfasser: | , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; rum |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a method for producing nanometric layers with content of diamond or fullerene nanoparticles, by irradiation with ultrashort pulses within the range of picoseconds and femtoseconds, generated by high power lasers (terawatt - TW or petawatt - PW) and, in particular, to a process of forming diamond/fullerene structures on layers of interest for the nuclear fusion, namely C, Be and W layers. According to the invention, the method of modifying a layer deposited on a graphite sublayer consists in producing, by the thermionic vacuum arc method, a C and W bi-layer with the W layer thickness ranging between 2000...2500 nm and that of the C layer ranging between 180...200 nm, deposited on a parallelepipedal graphite sublayer, guiding some laser beams of short duration 100...300 ps in mono-pulse or multi-pulse, with peak power within the range 10...10watt, with pulse energies in the range of micro-Joule to milli-Joule, by means of a lens, in a focal point having the size of 20 x 2 mm, in order to form, by multi-photon absorption, diamond nanocrystals embedded in an amorphous C matrix. As claimed by the invention, the method of modifying a film deposited on a Si sublayer consists in producing, by the thermionic vacuum arc method, a C, Be and W mixed film on Si sublayer, guiding some laser beams of short duration 100 fs...360 ps in mono-pulse or multi-pulse with peak power within the range of 10...10watt, with pulse energies in the range of micro-Joule to milli-Joule, by means of a condensing lens, in a focal point of a plasma, at the normal pressure of the environment or deuterium at the pressure of 20 mbar, in order to produce structures with content of fullerene, beryllium oxide and/or wolfram oxide.
Invenţia se referă la o metodă de producere a unor straturi nanometrice cu conţinut de nanoparticule de diamant sau fulerene, prin iradiere cu pulsuri ultrascurte de ordinul picosecundelor şi fentosecundelor, produse de laseri de mare putere (terrawat - TW sau petawat - PW) şi se referă, în special, la un proces de formare a structurilor diamantifere/fulerene pe straturi de interes pentru fuziunea nucleară, respectiv, straturi de C, Be şi W. Metoda de modificare a unui strat depus pe substrat de grafit, conform invenţiei, constă în producerea, prin metoda arcului termoionic în vid, a unui bistrat din C şi W, cu grosimea stratului de W cuprinsă între 2000...2500 nm şi a celui de C între 180...200 nm, depuse pe un substrat din grafit având formă p |
---|