PROCESS FOR MAKING PREDEFINED MICRON-RANGE AREAS MADE OF ZINC OXIDE STRUCTURES, OBTAINED BY SELF-CATALYTIC DEPOSITION
The invention relates to a process for making, by self-catalytic deposition, predefined micron-range areas made of zinc oxide structures to be used for applications in the field of sensors, the sensors being capable to detect the presence of ammonia vapour in the atmosphere, in electronics and opto-...
Gespeichert in:
Hauptverfasser: | , , , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng ; rum |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | The invention relates to a process for making, by self-catalytic deposition, predefined micron-range areas made of zinc oxide structures to be used for applications in the field of sensors, the sensors being capable to detect the presence of ammonia vapour in the atmosphere, in electronics and opto-electronics. According to the invention, the process consists in making some predefined micron-range areas on Si/SiOwafers using the classic photo-lithography method, then covering them with a first metallic Ti film having a thickness of 10 nm, by cathode sputtering, over which a second film is deposited using the method of thermal evaporation in vacuum, this second film being made of Au and having a thickness of 100 nm, and further on, in the final stage, on the said metallic gold layer with catalyst function, zinc oxide structures are deposited by the self-catalytic deposition method, using as reagents zinc nitrate and dimethylaminoborane, in a molar ratio of 7, at low reaction temperatures ranging between 70...80°C.
Invenţia se referă la un procedeu de obţinere, prin depunere autocatalitică, a unor arii micronice predefinite, formate din structuri de oxid de zinc care sunt utilizate pentru aplicaţii în senzoristică, senzorii putând detecta prezenţa în atmosferă a vaporilor de amoniac, în electronică şi optoelectronică. Procedeul conform invenţiei constă în obţinerea unor arii micronice predefinite pe plachete de Si/SiOprin metoda clasică a fotolitografiei, acoperirea ulterioară a acestora cu un prim film metalic de Ti cu grosimea de 10 nm, prin pulverizare catodică, peste care se depune prin metoda evaporării termice în vid un al doilea film de Au, cu o grosime de 100 nm şi în ultima etapă, prin metoda depunerii autocatalitice, peste acest strat metalic de aur, cu rol de catalizator, se depun structuri de oxid de zinc, utilizând ca reactivi azotatul de zinc şi dimetilaminoboranul, în raport molar egal cu 7, la temperaturi de reacţie scăzute, cuprinse între 70 şi 80°C. |
---|