PROCESS FOR OBTAINING NANOSTRUCTURED ARRAY-LIKE FILMS FORMED OF MONODISPERSE STRUCTURES OF ZINC OXIDE, BY CHEMICAL DEPOSITION

The invention relates to a process for obtaining nanostructured array-like films formed of monodisperse structures of zinc oxide, by chemical deposition, for applications in the field of sensors for detecting ammonia vapours, in microfluidics, electronics and opto-electronics. According to the inven...

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Bibliographische Detailangaben
Hauptverfasser:	ZGURA IRINA-IONELA, BUSUIOC CRISTINA, SOCOL MARCELA, COSTAS LILIANA-ANDREEA, OANCEA MIHAELA, ENCULESCU MARIA-MONICA, EVANGHELIDIS ALEXANDRU IONUŢ, MATEI ELENA, ENCULESCU IONUŢ-MARIUS, PREDA NICOLETA-ROXANA, FLORICA CAMELIA-FLORINA
Format:	Patent
Sprache:	eng ; rum
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The invention relates to a process for obtaining nanostructured array-like films formed of monodisperse structures of zinc oxide, by chemical deposition, for applications in the field of sensors for detecting ammonia vapours, in microfluidics, electronics and opto-electronics. According to the invention, the process consists in the deposition of array-like films of dimensionally monodisperse structures of ZnO, on silicon wafers containing metal electrodes interdigitated with predefined micron-range areas prepared using the classic photo-lythography method and covered afterwards with a metallic layer of Ti/Au, by a chemical reaction between zinc nitrate and hexamethylenetetraamine with equal molarities of the components =0.05, 0.1 and 0.2 mM, at low reaction temperatures ranging between 70° ... 80°C.