STRUCTURE PRODUCTION METHOD OF PLANAR-EPITAXIAL DIODE FOR HIGH PUNCH

The invention refers to a procedure for achieving the structure of the planar-epitaxial diode, used in applications requiring increased working voltages or break-through characteristics corresponding to volume break-through, useful in applications requiring working conditions in inverse polarization (radiation detectors, in optoelectronics, etc.).According to the invention, the procedure consists in the application of the mask to the guard-ring on silicon plates before the epitaxial growth, in order to delimit islands of silicon dioxide, with simultaneous increase of the volume of monocrystalline silicon, as well as that of polysilicon for the guard-ring. The procedure also generates local sources of diffusion of p++ type in polysilicon and of p+ type in monocrystalline silicon by ionic implants, so that the implantation occurs also in the volume of the diffusion sources, using as masks photoresist layers applied successively on the silicon dioxide layer grown at low temperatures (