PROCESSO DE FABRICO DE HETEROJUNÇÕES SEMICONDUTOR COVALENTE/ÓXIDO IÓNICO SEMICONDUTOR E RESPECTIVAS UTILIZAÇÕES NA OPTOELECTRÓNICA

O PRESENTE INVENTO CONSISTE NUMA HETEROJUNÇÃO BASEADA NUM SEMICONDUTOR COVALENTE (25), TIPO P OU N, CRISTALINO, POLICRISTALINO, NANOCRISTALINO OU AMORFO E UM ÓXIDO IÓNICO SEMICONDUTOR MULTICOMPOSTO OU NÃO (26), TIPO P OU N, POLICRISTALINO, NANOCRISTALINO OU AMORFO, E PROCESSOS DE FABRICO ASSOCIADOS...

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Hauptverfasser:	ELVIRA MARIA CORREIA FORTUNATO, ISABEL MARIA MERCES FERREIRA, RODRIGO FERRAO DE PAIVA MARTINS
Format:	Patent
Sprache:	por
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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