GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND PRODUCTION METHOD FOR GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE

A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the mai...

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Hauptverfasser:	SUMIDA, YASUNOBU, GOTO, HIROKI, ISHIHARA, YUJIRO, NAKAGAWA, TAKUYA, FUJIYAMA, YASUHARU
Format:	Patent
Sprache:	eng ; pol
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	A method for manufacturing a group III nitride semiconductor substrate includes a preparation step S10 for preparing a group III nitride semiconductor substrate having a sapphire substrate having a semipolar plane as a main surface, and a group III nitride semiconductor layer positioned over the main surface, in which a direction of the sapphire substrate and a direction of the group III nitride semiconductor layer do not intersect at right angles in a plan view in a direction perpendicular to the main surface, and a growth step S20 for epitaxially growing a group III nitride semiconductor over the group III nitride semiconductor layer.