Molecular beam epitaxy apparatus for producing wafers of semiconductor material

The present invention concerns a molecular beam epitaxy apparatus for producing wafers of semiconductor material, the device comprising a growth chamber (1) surrounding a process area (2), a main cryogenic panel having at least a lateral part (10) covering the inner surface of the lateral wall (3) o...

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Bibliographische Detailangaben
Hauptverfasser:	CASSAGNE, VALERICK, VILLETTE, JÉROME, CHAIX, CATHERINE
Format:	Patent
Sprache:	eng ; pol
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The present invention concerns a molecular beam epitaxy apparatus for producing wafers of semiconductor material, the device comprising a growth chamber (1) surrounding a process area (2), a main cryogenic panel having at least a lateral part (10) covering the inner surface of the lateral wall (3) of the growth chamber (1), a sample holder (6), at least one effusion cell (8) able to evaporate a material, a gas injector (9) able to inject a gaseous precursor into the growth chamber (1), pumping means (11) connected to the growth chamber (1) and able to provide high vacuum capability. According to the invention, the molecular beam epitaxy apparatus comprises an insulation enclosure (14) covering at least the inner surfaces of the growth chamber walls (3, 4, 5), said insulation enclosure (14) comprising cold parts having a temperature T min inferior or equal to melting point of the gaseous precursor, and hot parts having a temperature T min superior or equal to a temperature wherein the desorption rate of the gaseous precursor on said hot parts is at least 1000 times greater than the adsorption rate of said gaseous precursor.