CVD REACTOR COMPRISING AN RF-HEATED TREATMENT CHAMBER

The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed...

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Bibliographische Detailangaben
Hauptverfasser:	KÄPPELER, JOHANNES, WISCHMEYER, FRANK
Format:	Patent
Sprache:	eng ; pol
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	The invention concerns a deposition device in particular of crystalline coatings on at least one substrate in particular crystalline. Said device comprises a treatment chamber (5) consisting of a number of wall elements (1, 2, 3, 4), said wall elements (1, 2, 3, 4) being electroconductive and placed end-to-end, thus forming contacts (2′, 2″, 3′, 3″); a reactor housing (6) enclosing the wall elements (1, 2, 3, 4) of the treatment chamber and made of a non-electroconductive material and a RF-heated coil surrounding the wall elements (1, 2, 3, 4) of the treatment chamber. The invention is characterized in that a massive single-piece shield heating pipe (8) is implanted between the reactor housing (6) and the walls (1, 2, 3, 4) of the treatment chamber. The material of said pipe is electroconductive so that it is heated by the eddy currents induced therein by the RF field generated by the RF coil and so that it absorbs considerably the RF field and heats the walls (1, 2, 3, 4) of the treatment chamber.