SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

A method for producing a semiconductor device, which comprises: a step for producing a semiconductor chip with a protective film, said semiconductor chip having a first protective film on a first surface that has a bump or alternatively having a second protective film on a second surface that is on the reverse side of the first surface; and a step for producing a multilayer structure wherein the semiconductor chip with a protective film is bonded to a substrate, with the bump being interposed therebetween. During the production of the semiconductor chip with a protective film, the first protective film is formed such that the upper part of the bump penetrates through and protrudes from the first protective film. The first protective film or the second protective film has such characteristics that enable the multilayer structure to have a shear strength ratio of 1.05 to 2 and a fracture risk factor of -0.9 to 0.9.