TIN OXIDE SEMICONDUCTING NANOMATERIAL, GAS SENSOR ELECTRODE AND PROCESS FOR FORMING THE SAME, AND GAS SENSING DEVICE INCLUDING THE GAS SENSOR ELECTRODE

A gas sensing device (20) includes a gas sensor electrode (10), a variable resistor (21) electrically coupled in parallel to the gas sensor electrode (10), and a voltage measuring circuit (22) electrically coupled in parallel to the variable resistor (21). The gas sensor electrode (10) includes a su...

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Bibliographische Detailangaben
Hauptverfasser:	BRIONES, Jonathan C, SANTOS, Gil Nonato C
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS TESTING
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Beschreibung
Zusammenfassung:	A gas sensing device (20) includes a gas sensor electrode (10), a variable resistor (21) electrically coupled in parallel to the gas sensor electrode (10), and a voltage measuring circuit (22) electrically coupled in parallel to the variable resistor (21). The gas sensor electrode (10) includes a substrate (11) and a gas sensing layer (12) that is formed on the substrate (11) and made of a tin oxide semiconducting nanomaterial having a resistivity not greater than 5000 ohm-meter. A process for forming the gas sensor electrode (10) is also disclosed