BONDING WIRE FOR SEMICONDUCTOR DEVICE
Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu allo...
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| creator | UNO TOMOHIRO OYAMADA TETSUYA DEAI HIROYUKI |
| description | Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2 pcnt by weight, and the thickness of the Pd coating layer is 0.015-0.150 mm. |
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A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2 pcnt by weight, and the thickness of the Pd coating layer is 0.015-0.150 mm.</description><language>eng</language><subject>ALLOYS ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FERROUS OR NON-FERROUS ALLOYS ; METALLURGY ; SEMICONDUCTOR DEVICES ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2017</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170109&DB=EPODOC&CC=PH&NR=12016502098A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20170109&DB=EPODOC&CC=PH&NR=12016502098A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UNO TOMOHIRO</creatorcontrib><creatorcontrib>OYAMADA TETSUYA</creatorcontrib><creatorcontrib>DEAI HIROYUKI</creatorcontrib><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><description>Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2 pcnt by weight, and the thickness of the Pd coating layer is 0.015-0.150 mm.</description><subject>ALLOYS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2017</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFB18vdz8fRzVwj3DHJVcPMPUgh29fV0BgqGOocAeS6uYZ7OrjwMrGmJOcWpvFCam0HFzTXE2UM3tSA_PrW4IDE5NS-1JD7Aw9DIwNDM1MDIwNLC0dCYSGUAanokdA</recordid><startdate>20170109</startdate><enddate>20170109</enddate><creator>UNO TOMOHIRO</creator><creator>OYAMADA TETSUYA</creator><creator>DEAI HIROYUKI</creator><scope>EVB</scope></search><sort><creationdate>20170109</creationdate><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><author>UNO TOMOHIRO ; OYAMADA TETSUYA ; DEAI HIROYUKI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_PH12016502098A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2017</creationdate><topic>ALLOYS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>UNO TOMOHIRO</creatorcontrib><creatorcontrib>OYAMADA TETSUYA</creatorcontrib><creatorcontrib>DEAI HIROYUKI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UNO TOMOHIRO</au><au>OYAMADA TETSUYA</au><au>DEAI HIROYUKI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>BONDING WIRE FOR SEMICONDUCTOR DEVICE</title><date>2017-01-09</date><risdate>2017</risdate><abstract>Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2 pcnt by weight, and the thickness of the Pd coating layer is 0.015-0.150 mm.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS METALLURGY SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS |
| title | BONDING WIRE FOR SEMICONDUCTOR DEVICE |
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