BONDING WIRE FOR SEMICONDUCTOR DEVICE

Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu allo...

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Bibliographische Detailangaben
Hauptverfasser:	UNO TOMOHIRO, OYAMADA TETSUYA, DEAI HIROYUKI
Format:	Patent
Sprache:	eng
Schlagworte:	ALLOYS BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERROUS OR NON-FERROUS ALLOYS METALLURGY SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS
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Beschreibung
Zusammenfassung:	Provided is a bonding wire that has improved bonding reliability and ball-forming performance in a ball joint and that is suitable for an automotive device. A bonding wire for a semiconductor device that has a Cu alloy core material and a Pd coating layer that is formed on the surface of the Cu alloy core material, wherein the Cu alloy core material contains Ni, the concentration of Ni relative to the entire wire is 0.1-1.2 pcnt by weight, and the thickness of the Pd coating layer is 0.015-0.150 mm.