SILICON SUBSTRATES WITH DOPED SURFACE CONTACTS FORMED DOPED SILICON INKS AND CORRESPONDING PROCESSES

The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	LIU, GUOJUN, SRINIVASAN, UMA, CHIRUVOLU, SHIVKUMAR
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION ORPROCESSING OF GOODS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES NANOTECHNOLOGY PERFORMING OPERATIONS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The use of doped silicon nanoparticle inks and other liquid dopant sources can provide suitable dopant sources for driving dopant elements into a crystalline silicon substrate using a thermal process if a suitable cap is provided. Suitable caps include, for example, a capping slab, a cover that may or may not rest on the surface of the substrate and a cover layer. Desirable dopant profiled can be achieved. The doped nanoparticles can be delivered using a silicon ink. The residual silicon ink can be removed after the dopant drive-in or at least partially densified into a silicon material that is incorporated into the product device. The silicon doping is suitable for the introduction of dopants into crystalline silicon for the formation of solar cells.