Koplingsklemme

Forming an electrostatic discharge device on a Si substrate comprises forming a field oxide layer on the substrate (30) to define buried contact, ESD and device regions, and forming dielectric and conducting (36) layers overall. These layers are etched to form a contact window in the buried contact region and expose source/drain in the ESD region and a second conducting layer (38) formed. Ions are implanted to increase the conductivity of the conducting layers and to form diffusion regions under the source/drain and contact window, a silicide layer (40) is formed over the second conducting layer and the layers etched to form gate electrodes in the ESD and device regions.