SELF-ALIGNED VIA PATTERNING FOR BACKSIDE INTERCONNECTS

Devices, transistor structures, systems, and techniques are described herein related to coupling backside and frontside metallization layers that are on opposite sides of a device layer. A device includes a transistor having semiconductor structures extending between a source and a drain, and a gate...

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Bibliographische Detailangaben
Hauptverfasser:	LEONARD GULER, MAKRAM ABD EL QADER, CHANAKA MUNASINGHE, PRATIK PATEL, ANINDYA DASGUPTA, REZA BAYATI, SIKANDAR ABBAS, MADELEINE STOLT
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Devices, transistor structures, systems, and techniques are described herein related to coupling backside and frontside metallization layers that are on opposite sides of a device layer. A device includes a transistor having semiconductor structures extending between a source and a drain, and a gate between the source and drain, a bridge via extending between a frontside metallization over the transistor and a backside metallization below the transistor, and a thin insulative liner between the bridge via and components of the transistor.