SINTERED BODY AND COMPONENT PART INCLUDING SAME
The present disclosure relates to a sintered body with improved plasma etch resistance and a component part, which includes the sintered body, for a plasma processing apparatus. The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greate...
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| creator | SUNGSIC HWANG YONGSOO CHOI KYUNGIN KIM JUNG KUN KANG SU MAN CHAE KYUNGYEOL MIN |
| description | The present disclosure relates to a sintered body with improved plasma etch resistance and a component part, which includes the sintered body, for a plasma processing apparatus. The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greater than 1 pm and less than or equal to 4 pm is 61% to 86% based on a volume ratio of total grains on a surface of the sintered body. A method of preparing a sintered body comprises charging a raw material composition in a mold, molding the raw material composition, and carbonizing the molded raw material at a temperature of 500 °C to 1000 °C; a first sintering of performing a first thermal process at a temperature of 1900 °C to 2100 °C after the carbonizing; and a second sintering of performing a second thermal process at a temperature of 2000 °C to 2230 °C after the first sintering, wherein the raw material composition comprises boron carbide and a sintering enhancer, and wherein the first sintering and the second sintering are performed at a pressure of 25 MPa to 60 MPa, respectively. |
| format | Patent |
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The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greater than 1 pm and less than or equal to 4 pm is 61% to 86% based on a volume ratio of total grains on a surface of the sintered body. A method of preparing a sintered body comprises charging a raw material composition in a mold, molding the raw material composition, and carbonizing the molded raw material at a temperature of 500 °C to 1000 °C; a first sintering of performing a first thermal process at a temperature of 1900 °C to 2100 °C after the carbonizing; and a second sintering of performing a second thermal process at a temperature of 2000 °C to 2230 °C after the first sintering, wherein the raw material composition comprises boron carbide and a sintering enhancer, and wherein the first sintering and the second sintering are performed at a pressure of 25 MPa to 60 MPa, respectively.</description><language>eng</language><subject>ARTIFICIAL STONE ; BASIC ELECTRIC ELEMENTS ; CEMENTS ; CERAMICS ; CHEMISTRY ; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS ; CONCRETE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; LIME, MAGNESIA ; METALLURGY ; REFRACTORIES ; SEMICONDUCTOR DEVICES ; SLAG ; TREATMENT OF NATURAL STONE</subject><creationdate>2024</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240524&DB=EPODOC&CC=NL&NR=2036260A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20240524&DB=EPODOC&CC=NL&NR=2036260A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SUNGSIC HWANG</creatorcontrib><creatorcontrib>YONGSOO CHOI</creatorcontrib><creatorcontrib>KYUNGIN KIM</creatorcontrib><creatorcontrib>JUNG KUN KANG</creatorcontrib><creatorcontrib>SU MAN CHAE</creatorcontrib><creatorcontrib>KYUNGYEOL MIN</creatorcontrib><title>SINTERED BODY AND COMPONENT PART INCLUDING SAME</title><description>The present disclosure relates to a sintered body with improved plasma etch resistance and a component part, which includes the sintered body, for a plasma processing apparatus. 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| subjects | ARTIFICIAL STONE BASIC ELECTRIC ELEMENTS CEMENTS CERAMICS CHEMISTRY COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDINGMATERIALS CONCRETE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY LIME, MAGNESIA METALLURGY REFRACTORIES SEMICONDUCTOR DEVICES SLAG TREATMENT OF NATURAL STONE |
| title | SINTERED BODY AND COMPONENT PART INCLUDING SAME |
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