SINTERED BODY AND COMPONENT PART INCLUDING SAME

The present disclosure relates to a sintered body with improved plasma etch resistance and a component part, which includes the sintered body, for a plasma processing apparatus. The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greate...

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Bibliographische Detailangaben
Hauptverfasser: SUNGSIC HWANG, YONGSOO CHOI, KYUNGIN KIM, JUNG KUN KANG, SU MAN CHAE, KYUNGYEOL MIN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present disclosure relates to a sintered body with improved plasma etch resistance and a component part, which includes the sintered body, for a plasma processing apparatus. The sintered body includes boron carbide, wherein a volume ratio of grains of the boron carbide having a grain size greater than 1 pm and less than or equal to 4 pm is 61% to 86% based on a volume ratio of total grains on a surface of the sintered body. A method of preparing a sintered body comprises charging a raw material composition in a mold, molding the raw material composition, and carbonizing the molded raw material at a temperature of 500 °C to 1000 °C; a first sintering of performing a first thermal process at a temperature of 1900 °C to 2100 °C after the carbonizing; and a second sintering of performing a second thermal process at a temperature of 2000 °C to 2230 °C after the first sintering, wherein the raw material composition comprises boron carbide and a sintering enhancer, and wherein the first sintering and the second sintering are performed at a pressure of 25 MPa to 60 MPa, respectively.