COMPOSITE LITHOGRAPHY ALIGNMENT SYSTEM AND METHOD BASED ON SUPER-RESOLUTION IMAGING OF DIELECTRIC MICROSPHERES

Disclosed is a composite lithography alignment system and method based on super- resolution imaging of dielectric microspheres. The system comprises a beam splitter; one end of the beam splitter is provided with a micro objective, a mask and a silicon wafer successively, and the other end of the beam splitter is provided with a low pass filter, a tube lens and a CMOS camera successively; a laser is installed on one side of the beam splitter; a Kohler illumination system is arranged between the laser and the beam splitter; one end of the mask is provided with a dielectric microsphere layer; the mask is provided with a first alignment label, a second alignment label and a third alignment label; and the silicon wafer is provided with a fourth alignment label, a fifth alignment label and sixth alignment labels which are matched with the labels on the mask respectively. Through arrangement of optical devices or subsystems such as the low pass filter, the Kohler illumination system and the dielectric microsphere layer in the present invention, the resolution of alignment images is improved; and the high accuracy alignment of the mask and the silicon wafer is realized through the steps of coarse alignment fine alignment pre-processing and fine alignment.