RF amplifier package

The present invention relates to a radiofrequency, 'RF', amplifier package. The present invention further relates to a semiconductor die comprising an RF power FET that is used in such an amplifier package. According to the invention, the RF power FET comprises a second drain bondbar that is arranged in between the gate bondbar and the first drain bondbar, the latter being connected to the output terminal of the RF amplifier package. From the second drain bondbar, drain fingers extend towards the gate bondbar and drain fingers extend towards the first drain bondbar. The second drain bondbar is connected to a DC blocking capacitor using bondwires. These bondwires form an inductance for resonating with the output capacitance of the RF power FET at or close to the operational frequency of the RF amplifier package. By arranging the second drain bondbar in between the gate bondbar and the first drain bondbar, the RF amplifier package can be operated at higher frequencies.