Power amplifier with decreased RF return current losses
The present invention is related to a radiofrequency 'RF' power amplifier package and to an electronic device comprising the same. The RF power amplifier package comprises a RF power 5 transistor. According to the invention, each input finger of the RF power transistor physically extends for...
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creator | IOURI VOLOKHINE JOS VAN DER ZANDEN YI ZHU VITTORIO CUOCO |
description | The present invention is related to a radiofrequency 'RF' power amplifier package and to an electronic device comprising the same. The RF power amplifier package comprises a RF power 5 transistor. According to the invention, each input finger of the RF power transistor physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package; and/or each output finger physically extends for a larger part in a region in between the output 10 bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads. 1 5 |
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The RF power amplifier package comprises a RF power 5 transistor. According to the invention, each input finger of the RF power transistor physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package; and/or each output finger physically extends for a larger part in a region in between the output 10 bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads. 1 5</description><language>eng</language><subject>AMPLIFIERS ; BASIC ELECTRIC ELEMENTS ; BASIC ELECTRONIC CIRCUITRY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200430&DB=EPODOC&CC=NL&NR=2021545B1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200430&DB=EPODOC&CC=NL&NR=2021545B1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IOURI VOLOKHINE</creatorcontrib><creatorcontrib>JOS VAN DER ZANDEN</creatorcontrib><creatorcontrib>YI ZHU</creatorcontrib><creatorcontrib>VITTORIO CUOCO</creatorcontrib><title>Power amplifier with decreased RF return current losses</title><description>The present invention is related to a radiofrequency 'RF' power amplifier package and to an electronic device comprising the same. The RF power amplifier package comprises a RF power 5 transistor. According to the invention, each input finger of the RF power transistor physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package; and/or each output finger physically extends for a larger part in a region in between the output 10 bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads. 1 5</description><subject>AMPLIFIERS</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPyC9PLVJIzC3IyUzLBLLKM0syFFJSk4tSE4tTUxSC3BSKUktKi_IUkkuLilLzShRy8ouLU4t5GFjTEnOKU3mhNDeDoptriLOHbmpBfnxqcUFicmpeakm8n4-RgZGhqYmpk5OhMTFqANetLhQ</recordid><startdate>20200430</startdate><enddate>20200430</enddate><creator>IOURI VOLOKHINE</creator><creator>JOS VAN DER ZANDEN</creator><creator>YI ZHU</creator><creator>VITTORIO CUOCO</creator><scope>EVB</scope></search><sort><creationdate>20200430</creationdate><title>Power amplifier with decreased RF return current losses</title><author>IOURI VOLOKHINE ; JOS VAN DER ZANDEN ; YI ZHU ; VITTORIO CUOCO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_NL2021545BB13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2020</creationdate><topic>AMPLIFIERS</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>IOURI VOLOKHINE</creatorcontrib><creatorcontrib>JOS VAN DER ZANDEN</creatorcontrib><creatorcontrib>YI ZHU</creatorcontrib><creatorcontrib>VITTORIO CUOCO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IOURI VOLOKHINE</au><au>JOS VAN DER ZANDEN</au><au>YI ZHU</au><au>VITTORIO CUOCO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Power amplifier with decreased RF return current losses</title><date>2020-04-30</date><risdate>2020</risdate><abstract>The present invention is related to a radiofrequency 'RF' power amplifier package and to an electronic device comprising the same. The RF power amplifier package comprises a RF power 5 transistor. According to the invention, each input finger of the RF power transistor physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package; and/or each output finger physically extends for a larger part in a region in between the output 10 bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads. 1 5</abstract><oa>free_for_read</oa></addata></record> |
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subjects | AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | Power amplifier with decreased RF return current losses |
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