Power amplifier with decreased RF return current losses

The present invention is related to a radiofrequency 'RF' power ampliﬁer package and to an electronic device comprising the same. The RF power ampliﬁer package comprises a RF power 5 transistor. According to the invention, each input ﬁnger of the RF power transistor physically extends for...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	IOURI VOLOKHINE, JOS VAN DER ZANDEN, YI ZHU, VITTORIO CUOCO
Format:	Patent
Sprache:	eng
Schlagworte:	AMPLIFIERS BASIC ELECTRIC ELEMENTS BASIC ELECTRONIC CIRCUITRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	The present invention is related to a radiofrequency 'RF' power ampliﬁer package and to an electronic device comprising the same. The RF power ampliﬁer package comprises a RF power 5 transistor. According to the invention, each input ﬁnger of the RF power transistor physically extends for a larger part in a region in between the input side of the package and the input bond pads than in a region in between the input bond pads and the output side of the package; and/or each output ﬁnger physically extends for a larger part in a region in between the output 10 bond pads and the output side of the package than in a region in between the input side of the package and the output bond pads. 1 5