Dopant enhanced solar cell and method of manufacturing thereof

The present invention relates to a dopant enhanced solar cell based on a silicon substrate and method of manufacturing thereof. The solar cell includes on a surface of the substrate a layer stack including a thin oxide layer and a polysilicon layer, the 5 thin oxide layer being arranged as a tunnel oxide layer in-between the surface of the substrate and the polysilicon layer. The solar cell is provided with fire-through metal contacts arranged on the layer stack locally penetrating into the polysilicon layer. The silicon substrate is provided at the side of the surface with a dopant species that creates a dopant profile of a first conductivity type in the silicon substrate. The dopant lO profile in the silicon substrate has a maXimal dopant level between about 1>< 10+18 and about 3>