ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist...
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creator | CAYETANO SANCHEZ-FABRES COBALEDA SANJAYSINGH LALBAHADOERSING |
description | The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed. |
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b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180214&DB=EPODOC&CC=NL&NR=2019151A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20180214&DB=EPODOC&CC=NL&NR=2019151A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CAYETANO SANCHEZ-FABRES COBALEDA</creatorcontrib><creatorcontrib>SANJAYSINGH LALBAHADOERSING</creatorcontrib><title>ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD</title><description>The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; 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SANJAYSINGH LALBAHADOERSING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_NL2019151A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>CAYETANO SANCHEZ-FABRES COBALEDA</creatorcontrib><creatorcontrib>SANJAYSINGH LALBAHADOERSING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CAYETANO SANCHEZ-FABRES COBALEDA</au><au>SANJAYSINGH LALBAHADOERSING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD</title><date>2018-02-14</date><risdate>2018</risdate><abstract>The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
title | ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD |
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