ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD

The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CAYETANO SANCHEZ-FABRES COBALEDA, SANJAYSINGH LALBAHADOERSING
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator CAYETANO SANCHEZ-FABRES COBALEDA
SANJAYSINGH LALBAHADOERSING
description The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_NL2019151A</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>NL2019151A</sourcerecordid><originalsourceid>FETCH-epo_espacenet_NL2019151A3</originalsourceid><addsrcrecordid>eNrjZAhz9PF09_N19QtR8HUM8lYIcnX2D3MNilTwdQ3x8HfRUfDxBNLuQY4BHp7OCo4BAY5BjiGhwQqOfi4KLq5hns6uQH1-oW6OziGhQZ5-7lB9PAysaYk5xam8UJqbQd7NNcTZQze1ID8-tbggMTk1L7Uk3s_HyMDQ0tDU0NGYsAoA4mcv_g</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD</title><source>esp@cenet</source><creator>CAYETANO SANCHEZ-FABRES COBALEDA ; SANJAYSINGH LALBAHADOERSING</creator><creatorcontrib>CAYETANO SANCHEZ-FABRES COBALEDA ; SANJAYSINGH LALBAHADOERSING</creatorcontrib><description>The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2018</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180214&amp;DB=EPODOC&amp;CC=NL&amp;NR=2019151A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20180214&amp;DB=EPODOC&amp;CC=NL&amp;NR=2019151A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>CAYETANO SANCHEZ-FABRES COBALEDA</creatorcontrib><creatorcontrib>SANJAYSINGH LALBAHADOERSING</creatorcontrib><title>ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD</title><description>The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2018</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAhz9PF09_N19QtR8HUM8lYIcnX2D3MNilTwdQ3x8HfRUfDxBNLuQY4BHp7OCo4BAY5BjiGhwQqOfi4KLq5hns6uQH1-oW6OziGhQZ5-7lB9PAysaYk5xam8UJqbQd7NNcTZQze1ID8-tbggMTk1L7Uk3s_HyMDQ0tDU0NGYsAoA4mcv_g</recordid><startdate>20180214</startdate><enddate>20180214</enddate><creator>CAYETANO SANCHEZ-FABRES COBALEDA</creator><creator>SANJAYSINGH LALBAHADOERSING</creator><scope>EVB</scope></search><sort><creationdate>20180214</creationdate><title>ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD</title><author>CAYETANO SANCHEZ-FABRES COBALEDA ; SANJAYSINGH LALBAHADOERSING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_NL2019151A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2018</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>CAYETANO SANCHEZ-FABRES COBALEDA</creatorcontrib><creatorcontrib>SANJAYSINGH LALBAHADOERSING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>CAYETANO SANCHEZ-FABRES COBALEDA</au><au>SANJAYSINGH LALBAHADOERSING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD</title><date>2018-02-14</date><risdate>2018</risdate><abstract>The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_NL2019151A
source esp@cenet
subjects APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
title ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-12T19%3A41%3A48IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=CAYETANO%20SANCHEZ-FABRES%20COBALEDA&rft.date=2018-02-14&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3ENL2019151A%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true