ALIGNMENT MARK RECOVERY METHOD, LITHOGRAPHIC APPARATUS AND DEVICE MANUFACTURING METHOD

The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist...

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Bibliographische Detailangaben
Hauptverfasser:	CAYETANO SANCHEZ-FABRES COBALEDA, SANJAYSINGH LALBAHADOERSING
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS
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Beschreibung
Zusammenfassung:	The invention relates to a method for recovering alignment marks in a mark layer of a substrate, comprising the steps of: a) providing a substrate with a mark layer covered by a resist layer; b) forming alignment marks in the mark layer, wherein an alignment mark is formed by: - exposing the resist layer to a patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; c) forming one or more recovery marks in the mark layer, wherein a recovery mark is formed by: - exposing the resist layer to at least a portion of the patterned radiation beam thereby forming an alignment pattern in a mark area of the resist; and - subsequently exposing the mark area of the resist, each time with a shifted patterned radiation beam until a substantial part of the mark area has been exposed.