A chemical vapour deposition apparatus and use thereof

The plasma-enhanced chemical vapour deposition (PECVD) apparatus comprises a tubular chamber (100) configured for a wafer boat (10) with substrates. The PECVD apparatus further comprises heating means (110) arranged at an outside of the chamber and configured for emitting heat by means of radiation,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MALCOLM JOHN HARRIS, PETER ROELF VENEMA, MARTEN RONALD RENES, JOHANNES REINDER MARC LUCHIES
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The plasma-enhanced chemical vapour deposition (PECVD) apparatus comprises a tubular chamber (100) configured for a wafer boat (10) with substrates. The PECVD apparatus further comprises heating means (110) arranged at an outside of the chamber and configured for emitting heat by means of radiation, and a controller for controlling a state inside the chamber (100), including temperature and composition. Herein, the heating means (110) are configured for the provision of radiation according to a radially varying profile within the chamber, which radial heating profile comprises a first radial zone (I) and a second radial zone (II), and wherein a heat flux (FI) in the first radial zone (I) is higher than the heat flux (FII) in the second radial zone.