Method of obtaining a graded PECVD layer and plasma source assembly

Plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device and method of providing a flow of particles to a substrate. A plasma treatment outlet forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the p...

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Bibliographische Detailangaben
Hauptverfasser: ARTHUR WOUTER WEEBER, MACHTELD WILLEMIJN PETRONEL ELISABETH LAMERS
Format: Patent
Sprache:eng
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Zusammenfassung:Plasma source assembly (1) within a plasma enhanced chemical vapor deposition (PECVD) device and method of providing a flow of particles to a substrate. A plasma treatment outlet forms a plasma process zone for depositing a layer on the surface (2) by relative movement of the surface (2) along the plasma treatment outlet. The plasma treatment outlet has an upstream elongated rim (6) and a downstream elongated rim (7). A plasma creation zone (3) is present, as well as one or more input ports (9-11) positioned in the plasma process zone for providing a process gas to the plasma creation zone (3). The plasma source assembly (1) is further arranged to provide a gradient in the concentration of particles in the flow as measured from the upstream elongated rim (6) to the downstream elongated rim (7).