WERKWIJZE TER VERVAARDIGING VAN EEN HALFGELEIDERINRICHTING

WERKWIJZE TER VERVAARDIGING VAN EEN HALFGELEIDERINRICHTING

In Locos N-channel MOST-IC's underpasses can be obtained below the locos pattern by performing, at the area where the underpasses are to be formed, an As or Sb implantation prior to providing the locos. By using the nitride mask as an implantation mask, the locos and the source/drain zones of t...

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Bibliographische Detailangaben
Hauptverfasser: ELZE KOOI TE SUNNYVALE, PIETER JOHANNES WILHELMUS JOS TE HEEZE, IR. ADRIANUS TEUNIS VAN ZANTEN TE SOMEREN, CALIFORNIE, VER. ST. V. AM
Format: Patent
Sprache:dut
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:In Locos N-channel MOST-IC's underpasses can be obtained below the locos pattern by performing, at the area where the underpasses are to be formed, an As or Sb implantation prior to providing the locos. By using the nitride mask as an implantation mask, the locos and the source/drain zones of the transistors can be provided in a self-registering manner with respect to the underpasses.