HALFGELEIDERINRICHTING EN WERKWIJZE VOOR DE VERVAAR- DIGING DAARVAN

A semiconductor device having an island-shaped region of one conductivity type which is bounded by a region of the opposite conductivity type present below it, by an insulating pattern which is at least partly inset in the body, and by an isolation zone of the said opposite conductivity type which adjoins the insulating pattern and the region of the opposite type, a semiconductor circuit element being present entirely within the island-shaped region. According to the invention, the isolation zone extends through the insulating pattern up to a part of the semiconductor surface bounded entirely by said pattern so as to facilitate contacting of the isolation zone and so as to obtain isolation zones of high doping.